Si Oxidation and Lift - off Patterning Group 5 : Mohmmad Tanvir Alam Wayne Buckhanan Hubert George
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چکیده
This report shows the analysis of two essential processes in the integrated circuit fabrication: SiO2 growth and metal deposition. The first part consists of the characterization of dry and wet thermal oxidation. The idea is to obtain the parameters that describe the behavior of this process and use this to predict specific oxidation times and thicknesses. The second part consists of metal deposition (Aluminum and Titanium) on Silicon followed by “lift-off” where the metal patterns remain on the Silicon substrate.
منابع مشابه
Si Oxidation and Lift - off Patterning Group 5 : Mohmmad Tanvir Alam
This report shows the analysis of two essential processes in the integrated circuit fabrication: SiO2 growth and metal deposition. The first part consists of the characterization of dry and wet thermal oxidation. The idea is to obtain the parameters that describe the behavior of this process and use this to predict specific oxidation times and thicknesses. The second part consists of metal depo...
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تاریخ انتشار 2006